Porous Silicon on Insulator Technology

In this research, the structure, optical, and electrical properties of porous silicon prepared by electrochemical etching at current density 50 mA /cm2 with etching time 10 min, before and after rapid thermal oxidation process (RTO) at different oxidation temperature from (500-700) Ċ and constant oxidation time 60 s. Under optimum conditions, the pore size decreased after RTO leads to decrease porosity, the refractive index decreased for porous silicon (PS) and increased after oxidation. Electrical properties were showed an increase in rectification ratio after oxidation, where it varied from (3.93 to 158.8), the ideality factor which describes an approach the device from ideality characteristics founded decrease with increasing oxidation temperature where it varied from (9 to 5.4), the barrier height increased from (0.561 to 0.698 eV). The oxidation process improves electrical conductivity for electronic device by decreasing saturation current density that initiated from minority carriers, where (OPS/PS/Si) work as anti-reflected coating that benefit to eliminate swings effect and standing waves in photoresist.