Effect of Temperature on the Iron Sulphur Ratio of Pyrite Deposited by Aerosol Assisted Chemical Vapour Deposition Method

Pyrite semiconducting film was deposited on a glass substrate from the single source precursor (Fe (S2CN(Et)2)3) by Aerosol Assisted Chemical Vapour Deposition (AACVD). The p-XRD pattern of the deposited films shows that pure pyrite was deposited at 300°C whereas mixture of pyrite and marcasite was deposited at 350°C, 400°C and 450°C. EDX analysis shows that semiconducting pyrite was deposited at 300°C and 350°C, whereas metallic pyrite was deposited at 400°C and 450°C.