CHARACTERIZATION AND MITIGATION OF ELECTRO-STATIC BONDING FAILURES IN MICROSENSORS

Electrostatic bonding between glass and silicon is carried out in micro sensor devices to achieve higher bond strength thus eliminating the requirement of adhesives. This can also be useful in providing hermiticity and results in reliable operation of the micro sensor devices. Practically the sensor performance is prone to long term drift mainly due to process associated with the assembly and packaging. Bonding is the one of the critical process in micro sensor and generally sensor stability is dependent on this process along with other packaging material and methodology. Bond strength is one of the critical parameters to find out the quality of bond and the same is quantified and compared for different conditions. This article details electrostatic bonding process, various parameters responsible for the reliable bonding, modelling and characterization along with simple methodology to achieve higher bond strength.